au.\*:("CLOUGH F")
Results 1 to 8 of 8
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ADVANCED WASTE WATER TREATMENT PROCESSES AT COLESHILL.CLOUGH F.1977; CHEM. AND INDUSTRY; G.B.; DA. 1977; NO 20; PP. 811-816; BIBL. 2 REF.Article
STAFF RATINGS OF CHILDREN'S BEHAVIOUR IN HOSPITAL. COMPARABILITY OF FACTOR STRUCTURES.CLOUGH F.1978; BRIT. J. PSYCHOL.; G.B.; DA. 1978; VOL. 69; NO 1; PP. 59-68; BIBL. 27 REF.Article
The Relevance of Social and Clinical Criteria in Making Decisions for Scoliosis TreatmentCLOUGH, F.Social Science and Medicine. An International Journal London. 1978, Vol 12, Num 4, pp 219-228Article
Schottky barrier formation on r.f.-plasma enhanced chemical vapour deposited hydrogenated amorphous carbonPAUL, S; CLOUGH, F. J.Diamond and related materials. 1998, Vol 7, Num 11-12, pp 1734-1738, issn 0925-9635Article
Use of amorphous carbon as a gate insulator for GaAs and related compoundsPAUL, S; CLOUGH, F. J.Microelectronic engineering. 2003, Vol 70, Num 1, pp 78-82, issn 0167-9317, 5 p.Article
The role of the gate insulator in the defect pool model for hydrogenated amorphous silicon thin film transistor characteristicsDEANE, S. C; CLOUGH, F. J; MILNE, W. I et al.Journal of applied physics. 1993, Vol 73, Num 6, pp 2895-2901, issn 0021-8979Article
Tetrahedrally bonded amorphous carbon for use in thin film transistorsMILNE, W. I; CLOUGH, F. J; KLEINSORGE, B et al.Proceedings - Electrochemical Society. 1998, pp 299-308, issn 0161-6374, isbn 1-56677-216-8Conference Paper
Low-temperature (≤600°C) semi-insulating oxygen-doped silicon films by the PECVD technique for large-area power applicationsCLOUGH, F. J; BROWN, A. O; EKKANATH MADATHIL, S. N et al.Thin solid films. 1995, Vol 270, Num 1-2, pp 517-521, issn 0040-6090Conference Paper